Specification	IPB014N04NF2SATMA1

Current - Continuous Drain (Id) @ 25°C	38 A, 191 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	159 nC
Input Capacitance (Ciss) (Max) @ Vds	7500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	3.8 W, 188 W
Rds On (Max) @ Id, Vgs	1.45 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.4 V

StrongIRFET 2 Series

Part	Power Dissipation (Max)	Vgs (Max)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C
INFINEON IPB014N04NF2SATMA1	3.8 W 188 W	20 V	MOSFET (Metal Oxide)	175 °C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.4 V	40 V	1.45 mOhm	6 V 10 V	7500 pF	Surface Mount	159 nC	N-Channel	38 A 191 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	296	$ 2.55
Mouser	N/A	1	$ 2.33
		10	$ 1.60
		100	$ 0.91
		500	$ 0.78
		800	$ 0.75
Newark	Each (Supplied on Cut Tape)	1	$ 2.78
		10	$ 2.04
		25	$ 1.87
		50	$ 1.70
		100	$ 1.52
		250	$ 1.38
		500	$ 1.23
		1600	$ 1.20

Description

General part information

StrongIRFET 2 Series

Infineon'sStrongIRFET™ 2power MOSFET 40 V features low RDS(on)of 1.45 mOhm, addressing a broad range of applications from low- to high-switching frequency.

Documents

Technical documentation and resources

IPB014N04NF2SATMA1 | Datasheet

Datasheet

Technical Data Sheet EN

Datasheet