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INFINEON IRFH8325TRPBF
Discrete Semiconductor Products

BSZ240N12NS3GATMA1

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INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; PQFN 3.3 X 3.3 PACKAGE; 24 MOHM;

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INFINEON IRFH8325TRPBF
Discrete Semiconductor Products

BSZ240N12NS3GATMA1

Active
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; PQFN 3.3 X 3.3 PACKAGE; 24 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ240N12NS3GATMA1
Current - Continuous Drain (Id) @ 25°C37 A
Drain to Source Voltage (Vdss)120 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC
Input Capacitance (Ciss) (Max) @ Vds1900 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)66 W
Rds On (Max) @ Id, Vgs24 mOhm
Supplier Device PackagePG-TSDSON-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.20
10$ 1.41
100$ 0.96
500$ 0.76
1000$ 0.70
2000$ 0.65
Digi-Reel® 1$ 2.20
10$ 1.41
100$ 0.96
500$ 0.76
1000$ 0.70
2000$ 0.65
N/A 1538$ 2.00
Tape & Reel (TR) 5000$ 0.62
NewarkEach (Supplied on Cut Tape) 1$ 2.02
10$ 1.29
25$ 1.14
50$ 1.01
100$ 0.87
250$ 0.78
500$ 0.69
1000$ 0.63

Description

General part information

BSZ240 Series

The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications.The 120 V OptiMOS™ technology gives new possibilites for optimized solutions.