Discrete Semiconductor Products

TSM250NB06CV RGG

Active

MOSFETS 60V, 28A, SINGLE N-CHANNEL POWER MOSFET

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFETS 60V, 28A, SINGLE N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	TSM250NB06CV RGG

Current - Continuous Drain (Id) @ 25°C	28 A, 6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	7 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1440 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	42 W, 1.9 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	8-PDFN
Supplier Device Package [x]	3.15
Supplier Device Package [y]	3.1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package [y]	Supplier Device Package [x]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case
Taiwan Semiconductor Corporation TSM250NB06CV RGG	MOSFET (Metal Oxide)	Surface Mount	1440 pF	6 A 28 A	1.9 W 42 W	20 V	7 V 10 V	3.1	3.15	8-PDFN	25 mOhm	60 V	4 V	23 nC	N-Channel	150 °C	-55 °C	8-PowerWDFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	9954	$ 1.08
Mouser	N/A	10000	$ 0.22

General part information

MOSFETS 60V, 28A, SINGLE N-CHANNEL POWER MOSFET

Technical documentation and resources