Discrete Semiconductor Products

SICR10650CT

Active

DIODE SIL CARB 650V 5A TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE SIL CARB 650V 5A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SICR10650CT

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	60 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AB
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Mounting Type	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Technology	Package / Case	Supplier Device Package	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
SMC Diode Solutions SICR10650CT	Through Hole	No Recovery Time	0 ns	60 µA	SiC (Silicon Carbide) Schottky	TO-220-3	TO-220AB	5 A	650 V	1.7 V	175 ░C	-55 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 5A Through Hole TO-220AB

Technical documentation and resources