Discrete Semiconductor Products

IRF150P221XKMA1

Obsolete

MOSFET N-CH 150V 186A TO247-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 150V 186A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRF150P221XKMA1

Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	100 nC
Input Capacitance (Ciss) (Max) @ Vds	6000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	341 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.6 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IRF150P221XKMA1	175 °C	-55 °C	TO-247-3	MOSFET (Metal Oxide)	20 V	10 V	100 nC	341 W	4.5 mOhm	4.6 V	N-Channel	150 V	Through Hole	PG-TO247-3	6000 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 3.59