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SOT89
Discrete Semiconductor Products

PBSS5350X,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 50 V, 3 A PNP LOW VCESAT TRANSISTOR

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SOT89
Discrete Semiconductor Products

PBSS5350X,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 50 V, 3 A PNP LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS5350X,115
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]200
Frequency - Transition100 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]1.6 W
QualificationAEC-Q100
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic390 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1363$ 0.59
MouserN/A 1$ 0.47
10$ 0.29
100$ 0.18
500$ 0.14
1000$ 0.11
2000$ 0.10
5000$ 0.09
10000$ 0.09
25000$ 0.07

Description

General part information

PBSS5350X Series

PNP low VCEsattransistor in a SOT89 plastic package.