Discrete Semiconductor Products

IRLS3034TRLPBF

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MOSFET N-CH 40V 195A D2PAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 40V 195A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRLS3034TRLPBF

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	162 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	10315 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	375 W
Rds On (Max) @ Id, Vgs	1.7 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs
INFINEON IRLS3034TRLPBF	1.7 mOhm	10315 pF	2.5 V	D2PAK	40 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	195 A	N-Channel	375 W	MOSFET (Metal Oxide)	175 °C	-55 °C	Surface Mount	4.5 V 10 V	20 V	162 nC

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General part information

N-Channel 40 V 195A (Tc) 375W (Tc) Surface Mount D2PAK

Technical documentation and resources