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Infineon Technologies AG-IPI60R099CPAAKSA1 MOSFETs Trans MOSFET N-CH 600V 31A  3-Pin(3+Tab) TO-262 Tube Automotive AEC-Q101
Discrete Semiconductor Products

IPI60R099CPAAKSA1

Obsolete
INFINEON

TRANS MOSFET N-CH 600V 31A 3-PIN(3+TAB) TO-262 TUBE AUTOMOTIVE AEC-Q101

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Infineon Technologies AG-IPI60R099CPAAKSA1 MOSFETs Trans MOSFET N-CH 600V 31A  3-Pin(3+Tab) TO-262 Tube Automotive AEC-Q101
Discrete Semiconductor Products

IPI60R099CPAAKSA1

Obsolete
INFINEON

TRANS MOSFET N-CH 600V 31A 3-PIN(3+TAB) TO-262 TUBE AUTOMOTIVE AEC-Q101

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPI60R099CPAAKSA1
Current - Continuous Drain (Id) @ 25°C31 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]80 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]2800 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)255 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs105 mOhm
Supplier Device PackagePG-TO262-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IPI60R099 Series

N-Channel 600 V 31A (Tc) 255W (Tc) Through Hole PG-TO262-3

Documents

Technical documentation and resources

No documents available