Specification	PBHV8115T-QR

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	30 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Qualification	AEC-Q101
Supplier Device Package	TO-236AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	350 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	150 V

PBHV8115T-Q Series

150 V, 1 A NPN high-voltage low VCEsat transistor

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Qualification	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Operating Temperature	Package / Case	Grade
Nexperia USA Inc. PBHV8115T-QR	350 mV	100 nA	NPN	150 V	1 A	30 MHz	AEC-Q101	Surface Mount	100	TO-236AB	150 °C	SC-59 SOT-23-3 TO-236-3	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN high-voltage low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources