Discrete Semiconductor Products

SM6K2T110

NRND

MOSFETS 2N-CH 60V 200MA SOT-23-6

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Discrete Semiconductor Products

NRND

MOSFETS 2N-CH 60V 200MA SOT-23-6

Technical Specifications

Parameters and characteristics for this part

Specification	SM6K2T110

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	4.4 nC
Input Capacitance (Ciss) (Max) @ Vds	15 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-457, SC-74
Power - Max [Max]	300 mW
Rds On (Max) @ Id, Vgs	2.4 Ohm
Supplier Device Package	SMT6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Configuration	Drain to Source Voltage (Vdss)	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Vgs(th) (Max) @ Id	Supplier Device Package	Power - Max [Max]
Rohm Semiconductor SM6K2T110	SC-74 SOT-457	Surface Mount	MOSFET (Metal Oxide)	200 mA	2 N-Channel (Dual)	60 V	Logic Level Gate	15 pF	2.4 Ohm	4.4 nC	150 °C	2.5 V	SMT6	300 mW

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General part information

MOSFETS 2N-CH 60V 200MA SOT-23-6

Technical documentation and resources