Discrete Semiconductor Products

SI8810-TP

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Discrete Semiconductor Products

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INTERFACE

Technical Specifications

Parameters and characteristics for this part

Specification	SI8810-TP

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	890 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	300 mW
Rds On (Max) @ Id, Vgs [Max]	20 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
MCC (Micro Commercial Components) SI8810-TP	7 A	20 V	12 V	SC-59 SOT-23-3 TO-236-3	1.8 V 10 V	Surface Mount	-55 C	150 °C	N-Channel	300 mW	20 mOhm	MOSFET (Metal Oxide)	SOT-23	890 pF	1 V	15 nC
MCC (Micro Commercial Components) SI8810-TP	7 A	20 V	12 V	SC-59 SOT-23-3 TO-236-3	1.8 V 10 V	Surface Mount	-55 C	150 °C	N-Channel	300 mW	20 mOhm	MOSFET (Metal Oxide)	SOT-23	890 pF	1 V	15 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 7A 300mW Surface Mount SOT-23

Technical documentation and resources