Discrete Semiconductor Products

IPD60N10S4L12ATMA1

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IPD60N10S4L-12 IS AN AUTOMOTIVE MOSFET OFFERING 100V, N-CH, 12 MΩ MAX, DPAK, OPTIMOS™-T2, AEC QUALIFIED, 175°C OPERATING TEMP, ROHS COMPLIANT.

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Discrete Semiconductor Products

Active

IPD60N10S4L-12 IS AN AUTOMOTIVE MOSFET OFFERING 100V, N-CH, 12 MΩ MAX, DPAK, OPTIMOS™-T2, AEC QUALIFIED, 175°C OPERATING TEMP, ROHS COMPLIANT.

Technical Specifications

Parameters and characteristics for this part

Specification	IPD60N10S4L12ATMA1

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	49 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	3170 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	94 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	12 mOhm
Supplier Device Package	PG-TO252-3-313
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id [Max]	2.1 V

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25░C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Vgs (Max)	Package / Case	Mounting Type	FET Type	Technology	Grade	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON IPD60N10S412ATMA1	3.5 V	▒20V	175 ░C 175 °C	-55 ░C -55 °C	60 A	PG-TO252-3-313	2470 pF	34 nC	AEC-Q101	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	N-Channel	MOSFET (Metal Oxide)	Automotive	60 A	3.5 V	10 V	12.2 mOhm	94 W	100 V
INFINEON IPD60N10S4L12ATMA1			175 °C	-55 °C		PG-TO252-3-313		49 nC	AEC-Q101	16 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	N-Channel	MOSFET (Metal Oxide)	Automotive	60 A	2.1 V	4.5 V 10 V		94 W	100 V	12 mOhm	3170 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IPD60N10S4L-12 IS AN AUTOMOTIVE MOSFET OFFERING 100V, N-CH, 12 MΩ MAX, DPAK, OPTIMOS™-T2, AEC QUALIFIED, 175°C OPERATING TEMP, ROHS COMPLIANT.

Technical documentation and resources