Discrete Semiconductor Products

IHW20N120R5XKSA1

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INFINEON

THE IHW20N120R5 IS A 1200 V, 20 A IGBT DISCRETE WITH ANTI-PARALLEL DIODE (TO-247 PACKAGE)

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DocumentsDatasheet Technical Data Sheet EN

Discrete Semiconductor Products

IHW20N120R5XKSA1

Active

INFINEON

THE IHW20N120R5 IS A 1200 V, 20 A IGBT DISCRETE WITH ANTI-PARALLEL DIODE (TO-247 PACKAGE)

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IHW20N120R5XKSA1

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Pulsed (Icm)	60 A
Gate Charge	170 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	288 W
Supplier Device Package	PG-TO247-3
Switching Energy	750 µJ
Td (on/off) @ 25°C	-/260ns
Test Condition	20 A, 10 Ohm, 15 V, 600 V
Vce(on) (Max) @ Vge, Ic	1.75 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

IHW20N120 Series

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Mounting Type	Gate Charge	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Switching Energy	Test Condition	Td (on/off) @ 25°C	Current - Collector (Ic) (Max) [Max]	Supplier Device Package
INFINEON IHW20N120R5XKSA1	1200 V	TO-247-3	Through Hole	170 nC	175 °C	-40 °C	60 A	1.75 V	288 W	750 µJ	10 Ohm 15 V 20 A 600 V	-/260ns	40 A	PG-TO247-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1561	$ 3.45
	Tube	1	$ 4.46
		10	$ 2.94
		100	$ 2.08
		500	$ 1.71
		1000	$ 1.59
		2000	$ 1.55
Newark	Each	1	$ 5.27
		10	$ 4.61
		25	$ 3.94
		50	$ 3.29
		100	$ 3.07
		480	$ 2.84

Description

General part information

IHW20N120 Series

TheReverse Conducting R51200 V, 20 A RC-H5IGBTswith monolithically integrated reverse conducting diode in a TO-247 package has been optimized for the demanding requirements ofInduction Cookingapplications. With a monolithically integrated diode, the 1200 V RC-H5 IGBTs are perfectly suited for soft switching applications such asinduction cookingstoves andinverterized microwaveovens. The RC-H5 IGBT complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability.