Discrete Semiconductor Products

SQ4153EY-T1_GE3

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MOSFET P-CHANNEL 12V 25A 8SOIC

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Discrete Semiconductor Products

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MOSFET P-CHANNEL 12V 25A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SQ4153EY-T1_GE3

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	151 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	7.1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8.32 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	FET Type	Qualification	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Grade	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SQ4153EY-T1_GE3	P-Channel	AEC-Q101	Surface Mount	8.32 mOhm	8-SOIC	Automotive	151 nC	12 V	1.8 V 4.5 V	MOSFET (Metal Oxide)	900 mV	25 A	7.1 W	8-SOIC	3.9 mm	0.154 in	8 V	-55 °C	175 ░C
Vishay General Semiconductor - Diodes Division SQ4153EY-T1_BE3	P-Channel	AEC-Q101	Surface Mount	8.32 mOhm	8-SOIC	Automotive	151 nC	12 V	1.8 V 4.5 V	MOSFET (Metal Oxide)	900 mV	25 A	7.1 W	8-SOIC	3.9 mm	0.154 in	8 V	-55 °C	175 ░C

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General part information

P-Channel 12 V 25A (Tc) 7.1W (Tc) Surface Mount 8-SOIC

Technical documentation and resources