NSF080120D7A0J
Active1200 V, 80 MΩ, N-CHANNEL SIC MOSFET
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NSF080120D7A0J
Active1200 V, 80 MΩ, N-CHANNEL SIC MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | NSF080120D7A0J |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 33 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V, 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 52 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1335 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-263CA, D2PAK (7 Leads + Tab), TO-263-8 |
| Power Dissipation (Max) | 167 W |
| Rds On (Max) @ Id, Vgs | 120 mOhm |
| Supplier Device Package | TO-236-7 |
| Vgs (Max) [Max] | 22 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 2.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 575 | $ 16.85 | |
Description
General part information
NSF080120D7A0 Series
The NSF080120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
Documents
Technical documentation and resources