Discrete Semiconductor Products

BAS516HE3-TP

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DIODE GEN PURP 100V 250MA SOD523

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Discrete Semiconductor Products

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DIODE GEN PURP 100V 250MA SOD523

Technical Specifications

Parameters and characteristics for this part

Specification	BAS516HE3-TP

Capacitance @ Vr, F	1 pF
Current - Average Rectified (Io)	250 mA
Current - Reverse Leakage @ Vr	1 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SC-79, SOD-523
Qualification	AEC-Q101
Reverse Recovery Time (trr)	4 ns
Speed	500 ns, 200 mA
Supplier Device Package	SOD-523
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Grade	Mounting Type	Reverse Recovery Time (trr)	Supplier Device Package	Speed	Qualification
MCC (Micro Commercial Components) BAS516HE3-TP	250 mA	1.25 V	1 pF	1 µA	SC-79 SOD-523	-55 °C	150 °C	100 V	Standard	Automotive	Surface Mount	4 ns	SOD-523	200 mA 500 ns	AEC-Q101
MCC (Micro Commercial Components) BAS516HE3-TP	250 mA	1.25 V	1 pF	1 µA	SC-79 SOD-523	-55 °C	150 °C	100 V	Standard	Automotive	Surface Mount	4 ns	SOD-523	200 mA 500 ns	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 250mA Surface Mount SOD-523

Technical documentation and resources