Discrete Semiconductor Products

SI6443DQ-T1-E3

Obsolete

MOSFET P-CH 30V 7.3A 8TSSOP

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 7.3A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6443DQ-T1-E3

Current - Continuous Drain (Id) (Ta)	7.3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	60 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.173 in
Package Name	8-TSSOP
Package Width	4.4 mm
Power Dissipation (Max)	1.05 W
Rds On (Max)	12 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

Part	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Rds On (Max)	FET Type	Package Length	Package Name	Package Width	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)
Vishay Dale SI6443DQ-T1-E3	1.05 W	Surface Mount	7.3 A	60 nC	12 mOhm	P-Channel	0.173 in	8-TSSOP	4.4 mm	10 V	4.5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	20 V	30 V	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.74	30d+

3D models and CAD resources for this part

General part information

P-Channel 30 V 7.3A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP

Technical documentation and resources

No documents available