Discrete Semiconductor Products

BSZ040N06LS5ATMA1

Active

INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 PACKAGE; 4 MOHM;

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

BSZ040N06LS5ATMA1

Active

INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 PACKAGE; 4 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSZ040N06LS5ATMA1

Current - Continuous Drain (Id) @ 25°C	101 A, 17 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.6 nC, 22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.1 W, 69 W
Rds On (Max) @ Id, Vgs	4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

BSZ040 Series

Part	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C
INFINEON BSZ040N04LSGATMA1	8-PowerTDFN	20 V	40 A	18 A	PG-TSDSON-8	4 mOhm	MOSFET (Metal Oxide)	5100 pF	2.1 W 69 W	64 nC	2 V	40 V	4.5 V 10 V	Surface Mount	150 °C	-55 °C	N-Channel
INFINEON BSZ040N06LS5ATMA1	8-PowerTDFN	20 V				4 mOhm	MOSFET (Metal Oxide)		2.1 W 69 W	6.6 nC 22 nC	2.3 V	60 V	4.5 V 10 V	Surface Mount	150 °C	-55 °C	N-Channel	3100 pF	17 A 101 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.81
		10	$ 1.28
		100	$ 0.91
		500	$ 0.75
		1000	$ 0.72
	Digi-Reel®	1	$ 1.81
		10	$ 1.28
		100	$ 0.91
		500	$ 0.75
		1000	$ 0.72
	N/A	52973	$ 1.81
	Tape & Reel (TR)	5000	$ 0.65
Newark	Each (Supplied on Full Reel)	5000	$ 0.69

Description

General part information

BSZ040 Series

Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Qg) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (VGS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Documents

Technical documentation and resources