Discrete Semiconductor Products

BSC021N08NS5ATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; SUPERSO8 5X6 PACKAGE; 2.1 MOHM;

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DocumentsDatasheet Technical Data Sheet EN

Discrete Semiconductor Products

BSC021N08NS5ATMA1

Active

INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; SUPERSO8 5X6 PACKAGE; 2.1 MOHM;

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSC021N08NS5ATMA1

Current - Continuous Drain (Id) @ 25°C	100 A, 226 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	117 nC
Gate Charge (Qg) (Max) @ Vgs [Max]	29 nC
Input Capacitance (Ciss) (Max) @ Vds	8600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	214 W
Rds On (Max) @ Id, Vgs	2.1 mOhm
Supplier Device Package	PG-TSON-8-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

BSC021 Series

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs
INFINEON BSC021N08NS5ATMA1	100 A 226 A	29 nC	8-PowerTDFN	Surface Mount	3.8 V	20 V	8600 pF	80 V	175 °C	-55 °C	PG-TSON-8-3	6 V 10 V	214 W	N-Channel	117 nC	MOSFET (Metal Oxide)	2.1 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.89
		10	$ 3.25
		100	$ 2.32
		500	$ 1.92
		1000	$ 1.84
	Digi-Reel®	1	$ 4.89
		10	$ 3.25
		100	$ 2.32
		500	$ 1.92
		1000	$ 1.84
	N/A	18072	$ 4.87
	Tape & Reel (TR)	5000	$ 1.84

Description

General part information

BSC021 Series

Infineon'sOptiMOS™ MOSFETs in SuperSO8package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.