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TSNP-6-2
RF and Wireless

BGA8U1BN6E6327XTSA1

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INFINEON

IC RF AMP 5.15GHZ-5.85GHZ TSNP6

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TSNP-6-2
RF and Wireless

BGA8U1BN6E6327XTSA1

Active
INFINEON

IC RF AMP 5.15GHZ-5.85GHZ TSNP6

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBGA8U1BN6E6327XTSA1
Current - Supply4 mA
Frequency [Max]5.85 GHz
Frequency [Min]5.15 GHz
Mounting TypeSurface Mount
Noise Figure [Max]5 dB
Noise Figure [Min]1.6 dB
P1dB-5 dBm
Package / Case6-XFDFN
Supplier Device PackagePG-TSNP-6-2
Voltage - Supply [Max]3.1 V
Voltage - Supply [Min]1.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.35
10$ 0.85
25$ 0.72
100$ 0.57
250$ 0.49
500$ 0.45
1000$ 0.41
2500$ 0.37
5000$ 0.34
Digi-Reel® 1$ 1.35
10$ 0.85
25$ 0.72
100$ 0.57
250$ 0.49
500$ 0.45
1000$ 0.41
2500$ 0.37
5000$ 0.34
N/A 257$ 0.72
Tape & Reel (TR) 15000$ 0.31
30000$ 0.30

Description

General part information

BGA8U1 Series

The BGA8U1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 4.0 GHz to 6.0 GHz. The LNA provides 13.7 dB gain and 1.6 dB noise figure at a current consumption of 4.5mA. In bypass mode the LNA provides an insertion loss of 7.5 dB. The BGA8U1BN6 is based upon Infineon Technologies B7HF Silicon Germanium technology. It operates from 1.6 V to 3.1 V supply voltage. The device features a multi-state control (OFF-, bypass- and high gain-Mode).

Documents

Technical documentation and resources