Discrete Semiconductor Products

MJD2873J

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50 V, 2 A NPN HIGH POWER BIPOLAR TRANSISTOR

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Discrete Semiconductor Products

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50 V, 2 A NPN HIGH POWER BIPOLAR TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	MJD2873J

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	65 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	1.6 W
Supplier Device Package	DPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

50 V, 2 A NPN high power bipolar transistor

Part	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Power - Max [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Operating Temperature	Transistor Type
Nexperia USA Inc. MJD2873J	2 A	300 mV	65 MHz	120	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.6 W	DPAK	50 V	100 nA	Surface Mount	150 °C	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	53	$ 0.82

General part information

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources