Discrete Semiconductor Products
RFUH10TB4SNZC9
ActiveRohm Semiconductor
DIODE GEN PURP 430V 10A TO220NFM
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Discrete Semiconductor Products
RFUH10TB4SNZC9
ActiveRohm Semiconductor
DIODE GEN PURP 430V 10A TO220NFM
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RFUH10TB4SNZC9 |
|---|---|
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 150 ¯C |
| Package / Case | TO-220-2 Full Pack |
| Reverse Recovery Time (trr) | 25 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-220NFM |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 430 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.83 | |
| 10 | $ 1.18 | |||
| 100 | $ 0.81 | |||
| 500 | $ 0.75 | |||
Description
General part information
RFUH10TB4SNZ Series
ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
Documents
Technical documentation and resources