Specification	RN1102MFV,L3F

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Mounting Type	Surface Mount
Package / Case	SOT-723
Power - Max [Max]	150 mW
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	10 kOhms
Resistors Included	R1, R2
Supplier Device Package	VESM
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

RN1102 Series

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-723(VESM)

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Resistor - Emitter Base (R2)	Package / Case	Power - Max [Max]	Transistor Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Resistor - Base (R1)	Resistors Included	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition
Toshiba Semiconductor and Storage RN1102MFV,L3F	50	Surface Mount	100 mA	10 kOhms	SOT-723	150 mW	NPN - Pre-Biased	VESM	50 V	500 nA	10 kOhms	R1 R2	300 mV
Toshiba Semiconductor and Storage RN1102ACT(TPL3)	50	Surface Mount	80 mA	10 kOhms	SC-101 SOT-883	100 mW	NPN - Pre-Biased	CST3	50 V	500 nA	10 kOhms		150 mV
Toshiba Semiconductor and Storage RN1102T5LFT	50	Surface Mount	100 mA	10 kOhms	SC-75 SOT-416	100 mW	NPN - Pre-Biased	SSM	50 V	500 nA	10 kOhms		300 mV	250 MHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-723(VESM)

Technical documentation and resources