Integrated Circuits (ICs)
IS64WV25616EFBLL-10CTLA3
ActiveISSI, Integrated Silicon Solution Inc
SRAM 4MB,HIGH-SPEED/LOW POWER,ASYNC WITH ECC,256K X 16,10NS,2.4V-3.6V,44 PIN TSOP II, ROHS, AUTOMOTIVE TEMP
Deep-Dive with AI
Search across all available documentation for this part.
Integrated Circuits (ICs)
IS64WV25616EFBLL-10CTLA3
ActiveISSI, Integrated Silicon Solution Inc
SRAM 4MB,HIGH-SPEED/LOW POWER,ASYNC WITH ECC,256K X 16,10NS,2.4V-3.6V,44 PIN TSOP II, ROHS, AUTOMOTIVE TEMP
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IS64WV25616EFBLL-10CTLA3 |
|---|---|
| Access Time | 10 ns |
| Grade | Automotive |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 256 K |
| Memory Size | 512 kB |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 44-TSOP (0.400", 10.16mm Width) |
| Qualification | AEC-Q100 |
| Supplier Device Package | 44-TSOP II |
| Technology | SRAM - Asynchronous |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.4 V |
| Write Cycle Time - Word, Page | 10 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IS61WV25616EFBLL Series
SRAM 4MB,HIGH-SPEED/LOW POWER,ASYNC WITH ECC,256K X 16,10NS,2.4V-3.6V,44 PIN TSOP II, ROHS, AUTOMOTIVE TEMP
Documents
Technical documentation and resources
No documents available