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DocumentsGHXS100B170S-D3 | Datasheet
Deep-Dive with AI
DocumentsGHXS100B170S-D3 | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | GHXS100B170S-D3 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 214 A |
| Current - Reverse Leakage @ Vr | 400 µA |
| Diode Configuration | 2 Independent |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | SOT-227 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 18 | $ 65.97 | |
Description
General part information
GHXS100B170S-D3
1700V, 100A SIC DUAL DIODE MODUL
Documents
Technical documentation and resources