Discrete Semiconductor Products
BSZ180P03NS3GATMA1
ActiveINFINEON
OPTIMOS™ P-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 PACKAGE; 18 MOHM;
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Discrete Semiconductor Products
BSZ180P03NS3GATMA1
ActiveINFINEON
OPTIMOS™ P-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 PACKAGE; 18 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSZ180P03NS3GATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9 A, 39.6 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 6 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2220 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 40 W, 2.1 W |
| Rds On (Max) @ Id, Vgs | 18 mOhm |
| Supplier Device Package | PG-TSDSON-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 3.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSZ180 Series
These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Documents
Technical documentation and resources