Discrete Semiconductor Products

IRFS3006TRLPBF

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POWER MOSFET, N CHANNEL, 60 V, 195 A, 0.002 OHM, TO-263AB, SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 60 V, 195 A, 0.002 OHM, TO-263AB, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS3006TRLPBF

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	300 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8970 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	375 W
Rds On (Max) @ Id, Vgs	2.5 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
INFINEON IRFS3006TRL7PP	Surface Mount	175 °C	-55 °C	60 V	300 nC	MOSFET (Metal Oxide)	N-Channel	8850 pF	20 V	10 V	2.1 mOhm	375 W	D2PAK (7-Lead)	D2PAK (6 Leads + Tab) TO-263-7 TO-263CB	240 A	4 V
INFINEON IRFS3006TRLPBF	Surface Mount	175 °C	-55 °C	60 V	300 nC	MOSFET (Metal Oxide)	N-Channel	8970 pF	20 V	10 V	2.5 mOhm	375 W	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	195 A	4 V

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