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SOT23
Discrete Semiconductor Products

PBSS4032PT-QR

Active
Nexperia USA Inc.

30 V, 2.4 A PNP LOW VCESAT TRANSISTOR

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Search across all available documentation for this part.

DocumentsQuestions about package outline drawingsplastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body+7
SOT23
Discrete Semiconductor Products

PBSS4032PT-QR

Active
Nexperia USA Inc.

30 V, 2.4 A PNP LOW VCESAT TRANSISTOR

Deep-Dive with AI

DocumentsQuestions about package outline drawingsplastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body+7

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4032PT-QR
Current - Collector (Ic) (Max) [Max]2.4 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce200
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]390 mW
QualificationAEC-Q101
Supplier Device PackageTO-236AB
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic375 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.16

Description

General part information

PBSS4032PT-Q Series

PNP low VCEsattransistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.