Technical Specifications
Parameters and characteristics for this part
| Specification | IPP60R170CFD7XKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 14 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1199 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 75 W |
| Rds On (Max) @ Id, Vgs | 170 mOhm |
| Supplier Device Package | PG-TO220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 97 | $ 2.86 | |
| Tube | 1 | $ 3.63 | ||
| 10 | $ 2.37 | |||
| 100 | $ 1.66 | |||
| 500 | $ 1.36 | |||
| 1000 | $ 1.26 | |||
| 2000 | $ 1.23 | |||
Description
General part information
IPP60R170 Series
The600V CoolMOS™ CFD7is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Documents
Technical documentation and resources