Discrete Semiconductor Products

VS-40HFR160

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DIODE GEN PURP 1.6KV 40A DO203AB

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Discrete Semiconductor Products

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DIODE GEN PURP 1.6KV 40A DO203AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-40HFR160

Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	4.5 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	160 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Supplier Device Package	DO-203AB
Technology	Standard, Reverse Polarity
Voltage - Forward (Vf) (Max) @ If	1.5 V

Part	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Supplier Device Package	Supplier Device Package	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Mounting Type	Technology	Speed	Speed
Vishay General Semiconductor - Diodes Division VS-40HFR160	1.5 V	4.5 mA	DO-5	DO-203AB	DO-203AB DO-5 Stud	160 °C	-65 C	40 A	Chassis Stud Mount	Reverse Polarity Standard	Standard Recovery >500ns	200 mA

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General part information

Diode 1600 V 40A Chassis, Stud Mount DO-203AB (DO-5)

Technical documentation and resources