Discrete Semiconductor Products

IPB03N03LB G

Obsolete

MOSFET N-CH 30V 80A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 80A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IPB03N03LB G

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	59 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7624 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	2.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
INFINEON IPB03N03LB G	175 °C	-55 °C	30 V	59 nC	150 W	4.5 V 10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	2.8 mOhm	2 V	20 V	Surface Mount	7624 pF	N-Channel
INFINEON IPB03N03LA	175 °C	-55 °C	25 V	57 nC	150 W	4.5 V 10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	2.7 mOhm	2 V	20 V	Surface Mount		N-Channel	7027 pF	PG-TO263-3-2
INFINEON IPB03N03LB	175 °C	-55 °C	30 V	59 nC	150 W	4.5 V 10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	2.8 mOhm	2 V	20 V	Surface Mount	7624 pF	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 80A (Tc) 150W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources