Discrete Semiconductor Products

PBSS4232DD_L2_00001

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BIPOLAR TRANSISTORS - BJT NPN LOW VCE(SAT) TRANSISTOR

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT NPN LOW VCE(SAT) TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS4232DD_L2_00001

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	180
Frequency - Transition	270 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	2 W
Supplier Device Package	TO-252AA
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	32 V

Part	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Transistor Type	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]
Panjit International Inc. PBSS4232DD_L2_00001	2 W	150 °C	-55 °C	100 nA	800 mV	TO-252AA	180	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	2 A	NPN	270 MHz	32 V

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General part information

BIPOLAR TRANSISTORS - BJT NPN LOW VCE(SAT) TRANSISTOR

Technical documentation and resources