
Discrete Semiconductor Products
IDW10G120C5BFKSA1
ActiveINFINEON
SILICON CARBIDE SCHOTTKY DIODE, COOLSIC 5G SERIES, DUAL COMMON CATHODE, 1.2 KV, 34 A, 57 NC
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Discrete Semiconductor Products
IDW10G120C5BFKSA1
ActiveINFINEON
SILICON CARBIDE SCHOTTKY DIODE, COOLSIC 5G SERIES, DUAL COMMON CATHODE, 1.2 KV, 34 A, 57 NC
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IDW10G120C5BFKSA1 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 17 A |
| Current - Reverse Leakage @ Vr | 40 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | PG-TO247-3-41 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.65 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IDW10G120 Series
Diode Array 1 Pair Common Cathode 1200 V 17A Through Hole TO-247-3
Documents
Technical documentation and resources