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INFINEON IRFB4127PBF
Discrete Semiconductor Products

IRFB4127PBF

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INFINEON

POWER MOSFET, N CHANNEL, 200 V, 76 A, 0.017 OHM, TO-220AB, THROUGH HOLE

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet ENIR Part Numbering System+1
INFINEON IRFB4127PBF
Discrete Semiconductor Products

IRFB4127PBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 200 V, 76 A, 0.017 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

DocumentsTechnical Data Sheet ENIR Part Numbering System+1

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB4127PBF
Current - Continuous Drain (Id) @ 25°C76 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]150 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]5380 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)375 W
Rds On (Max) @ Id, Vgs20 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 90$ 1.59
Tube 1$ 4.67
10$ 3.10
100$ 2.20
500$ 1.82
1000$ 1.73
NewarkEach 1$ 2.57
10$ 2.47
100$ 1.99
500$ 1.93

Description

General part information

IRFB4127 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.