Specification	PSMN1R1-100CSEJ

Current - Continuous Drain (Id) @ 25°C	430 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	509 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	36460 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	Exposed Pad, 12-BESOP
Package / Case [x]	9.4 mm
Package / Case [x]	0.37 in
Power Dissipation (Max)	1.55 kW
Rds On (Max) @ Id, Vgs	1.09 mOhm
Supplier Device Package	CCPAK1212i
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

PSMN1R1-100CSE Series

N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package

Part	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package / Case [x]	Package / Case [x]	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
Nexperia USA Inc. PSMN1R1-100CSEJ	CCPAK1212i	Surface Mount	100 V	430 A	10 V	12-BESOP Exposed Pad	9.4 mm	0.37 in	N-Channel	1.09 mOhm	20 V	MOSFET (Metal Oxide)	175 °C	-55 °C	36460 pF	1.55 kW	3.6 V	509 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	807	$ 13.44

Description

General part information

PSMN1R1-100CSE Series

N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R1-100CSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212i).