Discrete Semiconductor Products

2SC5343-G-AP

Obsolete

TRANS NPN 50V 0.15A TO-92

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Discrete Semiconductor Products

Obsolete

TRANS NPN 50V 0.15A TO-92

Technical Specifications

Parameters and characteristics for this part

Specification	2SC5343-G-AP

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Supplier Device Package	Transistor Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
MCC (Micro Commercial Components) 2SC5343-G-AP	TO-92	NPN	100 nA	150 °C	Through Hole	250 mV	625 mW	50 V	150 mA	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	200
MCC (Micro Commercial Components) 2SC5343-G-AP	TO-92	NPN	100 nA	150 °C	Through Hole	250 mV	625 mW	50 V	150 mA	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	200
MCC (Micro Commercial Components) 2SC5343-L-AP	TO-92	NPN	100 nA	150 °C	Through Hole	250 mV	625 mW	50 V	150 mA	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	300

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General part information

Bipolar (BJT) Transistor NPN 50 V 150 mA 80MHz 625 mW Through Hole TO-92

Technical documentation and resources