Discrete Semiconductor Products

PHP20NQ20T,127

Obsolete

N-CHANNEL TRENCHMOS STANDARD LEVEL FET@EN-US TO-220 3-PIN

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Discrete Semiconductor Products

Obsolete

N-CHANNEL TRENCHMOS STANDARD LEVEL FET@EN-US TO-220 3-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PHP20NQ20T,127

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	2470 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs [Max]	130 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Supplier Device Package	FET Type	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
Freescale Semiconductor - NXP PHP20NQ20T,127	-55 °C	175 ░C	200 V	20 A	2470 pF	20 V	Through Hole	TO-220AB	N-Channel	TO-220-3	130 mOhm	65 nC	MOSFET (Metal Oxide)	150 W	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 20A (Tc) 150W (Tc) Through Hole TO-220AB

Technical documentation and resources