Specification	2SB906-Y(TE16L1,NQ

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	9 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	1 W
Supplier Device Package	PW-MOLD
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

2SB906 Series

Bipolar Transistors, PNP Bipolar Transistor, -60 V, -3 A, New PW-Mold

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Supplier Device Package	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Operating Temperature	Package / Case
Toshiba Semiconductor and Storage 2SB906-Y(TE16L1,NQ	100	Surface Mount	3 A	60 V	PNP	PW-MOLD	1 W	100 µA	9 MHz	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.78

General part information

Bipolar Transistors, PNP Bipolar Transistor, -60 V, -3 A, New PW-Mold

Technical documentation and resources