Discrete Semiconductor Products

SI7232DN-T1-GE3

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MOSFET 2N-CH 20V 25A PPAK 1212

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Discrete Semiconductor Products

Active

MOSFET 2N-CH 20V 25A PPAK 1212

Technical Specifications

Parameters and characteristics for this part

Specification	SI7232DN-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	1220 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8 Dual
Power - Max [Max]	23 W
Rds On (Max) @ Id, Vgs	16.4 mOhm
Supplier Device Package	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Vgs(th) (Max) @ Id	Power - Max [Max]	Package / Case	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Technology	Configuration	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI7232DN-T1-GE3	1 V	23 W	PowerPAK® 1212-8 Dual	Logic Level Gate	1220 pF	Surface Mount	-55 °C	150 °C	32 nC	16.4 mOhm	MOSFET (Metal Oxide)	2 N-Channel (Dual)	20 V	25 A	PowerPAK® 1212-8 Dual

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General part information

Mosfet Array 20V 25A 23W Surface Mount PowerPAK® 1212-8 Dual

Technical documentation and resources