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VQFN (RGE)
Integrated Circuits (ICs)

LM74930QRGERQ1

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Texas Instruments

AUTOMOTIVE 3-V TO 65-V SURGE STOPPER WITH CIRCUIT BREAKER AND OVERVOLTAGE PROTECTION

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VQFN (RGE)
Integrated Circuits (ICs)

LM74930QRGERQ1

Active
Texas Instruments

AUTOMOTIVE 3-V TO 65-V SURGE STOPPER WITH CIRCUIT BREAKER AND OVERVOLTAGE PROTECTION

Technical Specifications

Parameters and characteristics for this part

SpecificationLM74930QRGERQ1
ApplicationsRedundant Power Supplies
Current - Output (Max) [Max]2.6 A
Current - Supply665 µA
FET TypeN-Channel
GradeAutomotive
Internal Switch(s)False
Mounting TypeWettable Flank, Surface Mount
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case24-VFQFN Exposed Pad
QualificationAEC-Q100
Ratio - Input:Output [custom]1:1
Supplier Device Package24-VQFN (4x4)
TypeN+1 ORing Controller
Voltage - Supply [Max]65 V
Voltage - Supply [Min]4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.82
10$ 4.33
25$ 4.09
100$ 3.55
250$ 3.36
500$ 3.02
1000$ 2.55
Digi-Reel® 1$ 4.82
10$ 4.33
25$ 4.09
100$ 3.55
250$ 3.36
500$ 3.02
1000$ 2.55
Tape & Reel (TR) 3000$ 2.42
Texas InstrumentsLARGE T&R 1$ 3.64
100$ 3.19
250$ 2.23
1000$ 1.80

Description

General part information

LM74930-Q1 Series

The LM74930-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier and power path ON and OFF control with over current and overvoltage protection. The wide input supply of 4 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated high side gate control (HGATE) drives the first MOSFET in the power path. The device allows load disconnect (ON and OFF control) in case of overcurrent, overvoltage and undervoltage event using HGATE control while ideal diode controller (DGATE) drives a second MOSFET to replace a Schottky diode for input reverse polarity protection and output voltage holdup by blocking the reverse current from output to input. The device has integrated current sense amplifier which provides with an adjustable overcurrent and short circuit protection with circuit breaker functionality. The device features an adjustable overvoltage and undervoltage protection feature to protect against supply transients. LM74930-Q1 features MODE pin which can be used to selectively enable or disable reverse current blocking functionality.

The LM74930-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier and power path ON and OFF control with over current and overvoltage protection. The wide input supply of 4 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated high side gate control (HGATE) drives the first MOSFET in the power path. The device allows load disconnect (ON and OFF control) in case of overcurrent, overvoltage and undervoltage event using HGATE control while ideal diode controller (DGATE) drives a second MOSFET to replace a Schottky diode for input reverse polarity protection and output voltage holdup by blocking the reverse current from output to input. The device has integrated current sense amplifier which provides with an adjustable overcurrent and short circuit protection with circuit breaker functionality. The device features an adjustable overvoltage and undervoltage protection feature to protect against supply transients. LM74930-Q1 features MODE pin which can be used to selectively enable or disable reverse current blocking functionality.