Discrete Semiconductor Products

SIHK055N60EF-T1GE3

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E SERIES POWER MOSFET WITH FAST

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Discrete Semiconductor Products

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E SERIES POWER MOSFET WITH FAST

Technical Specifications

Parameters and characteristics for this part

Specification	SIHK055N60EF-T1GE3

Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Input Capacitance (Ciss) (Max) @ Vds	3667 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerBSFN
Rds On (Max) @ Id, Vgs	58 mOhm
Supplier Device Package	PowerPAK®10 x 12
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIHK055N60EF-T1GE3	5 V	Surface Mount	90 nC	MOSFET (Metal Oxide)	600 V	-55 °C	150 °C	8-PowerBSFN	58 mOhm	N-Channel	3667 pF	10 V	30 V	PowerPAK®10 x 12

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 40A (Tc) 236W (Tc) Surface Mount PowerPAK®10 x 12

Technical documentation and resources