Discrete Semiconductor Products

PMZ950UPELYL

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MOSFET P-CH 20V 500MA DFN1006-3

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Discrete Semiconductor Products

Active

MOSFET P-CH 20V 500MA DFN1006-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMZ950UPELYL

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	43 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	2.7 W, 360 mW
Rds On (Max) @ Id, Vgs [Max]	1.4 Ohm
Supplier Device Package	SOT-883
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	FET Type
Freescale Semiconductor - NXP PMZ950UPELYL	SC-101 SOT-883	43 pF	Surface Mount	500 mA	1.5 V 4.5 V	2.7 W 360 mW	2.1 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	20 V	SOT-883	950 mV	8 V	1.4 Ohm	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 500mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount SOT-883

Technical documentation and resources