Discrete Semiconductor Products

SIRA34DP-T1-GE3

Obsolete

MOSFET N-CH 30V 40A PPAK SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 40A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIRA34DP-T1-GE3

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	3.3 W, 31.25 W
Rds On (Max) @ Id, Vgs	6.7 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SIRA34DP-T1-GE3	Surface Mount	3.3 W 31.25 W	1100 pF	-16 V 20 V	N-Channel	2.4 V	-55 °C	150 °C	25 nC	PowerPAK® SO-8	PowerPAK® SO-8	MOSFET (Metal Oxide)	6.7 mOhm	30 V	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 40A (Tc) 3.3W (Ta), 31.25W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources