Discrete Semiconductor Products

PMF280UN,115

Obsolete

MOSFET N-CH 20V 1.02A SOT323-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 1.02A SOT323-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMF280UN,115

Current - Continuous Drain (Id) @ 25°C	1.02 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.89 nC
Input Capacitance (Ciss) (Max) @ Vds	45 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	560 mW
Rds On (Max) @ Id, Vgs	340 mOhm
Supplier Device Package	SC-70
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Freescale Semiconductor - NXP PMF280UN,115	0.89 nC	N-Channel	340 mOhm	Surface Mount	45 pF	20 V	1.02 A	560 mW	SC-70 SOT-323	1.8 V 4.5 V	1 V	8 V	MOSFET (Metal Oxide)	-55 °C	150 °C	SC-70

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 1.02A (Tc) 560mW (Tc) Surface Mount SC-70

Technical documentation and resources