Discrete Semiconductor Products

MPSA42 TIN/LEAD

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TRANS NPN 300V 0.5A TO92-3

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Discrete Semiconductor Products

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TRANS NPN 300V 0.5A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	MPSA42 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	300 V

Part	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Frequency - Transition	Package / Case	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Transistor Type	Mounting Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
Central Semiconductor Corp MPSA42 TIN/LEAD	500 mA	150 °C	-65 °C	TO-92-3	50 MHz	TO-226AA	TO-226-3 TO-92-3	40	300 V	625 mW	NPN	Through Hole	100 nA	500 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 625 mW Through Hole TO-92-3

Technical documentation and resources