Discrete Semiconductor Products
R6009JNXC7G
ActiveRohm Semiconductor
600V 9A TO-220FM, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE
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Discrete Semiconductor Products
R6009JNXC7G
ActiveRohm Semiconductor
600V 9A TO-220FM, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | R6009JNXC7G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 645 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 53 W |
| Rds On (Max) @ Id, Vgs | 585 mOhm |
| Supplier Device Package | TO-220FM |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
R6009JNX Series
R6009JNX is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).
Documents
Technical documentation and resources