Discrete Semiconductor Products

MURS820FA-BP

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DIODE GEN PURP 200V 8A ITO220AC

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Discrete Semiconductor Products

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DIODE GEN PURP 200V 8A ITO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	MURS820FA-BP

Capacitance @ Vr, F	65 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2 Isolated Tab
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V

Part	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Average Rectified (Io)	Speed	Capacitance @ Vr, F	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology
Micro Commercial Components MURS820FA-BP	35 ns	200 V	Through Hole	150 °C	-55 °C	TO-220-2 Isolated Tab	8 A	200 mA 500 ns	65 pF	ITO-220AC	5 µA	Standard
Micro Commercial Components MURS820A-BP	35 ns	200 V	Through Hole	150 °C	-55 °C	TO-220-2	8 A	200 mA 500 ns	65 pF	TO-220AC	5 µA	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 8A Through Hole ITO-220AC

Technical documentation and resources