Discrete Semiconductor Products

NTP30N06L

Obsolete

MOSFET N-CH 60V 30A TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 30A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	NTP30N06L

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	88.2 W
Rds On (Max) @ Id, Vgs	46 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

Part	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NTP30N06L	46 mOhm	TO-220-3	TO-220	30 A	N-Channel	Through Hole	15 V	32 nC	MOSFET (Metal Oxide)	60 V	5 V	-55 °C	175 ░C	2 V	88.2 W
ON Semiconductor NTP30N06	42 mOhm	TO-220-3	TO-220		N-Channel	Through Hole	20 V		MOSFET (Metal Oxide)	60 V	10 V	-55 °C	175 ░C	4 V	88.2 W	46 nC	1200 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 30A (Ta) 88.2W (Tc) Through Hole TO-220

Technical documentation and resources