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A1N5404G-G
Discrete Semiconductor Products

A1N5404G-G

Active
Comchip Technology

DIODE GEN PURP 400V 3A DO27

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A1N5404G-G
Discrete Semiconductor Products

A1N5404G-G

Active
Comchip Technology

DIODE GEN PURP 400V 3A DO27

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationA1N5404G-G
Capacitance50 pF
Current - Average Rectified (Io)3 A
Current - Reverse Leakage5 µA
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)150 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseDO-27, Axial, DO-201AA
Package NameDO-27
QualificationAEC-Q101
SpeedStandard Recovery
Speed - Fast Recovery (Minimum)200 mA, 500 ns
Speed - Recovery Current200 mA, 200 mA
Speed - Recovery Time500 ns
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)400 V
Voltage - Forward (Vf) (Max)1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 0.431m+
10$ 0.37
100$ 0.25
500$ 0.20
N/A 959$ 0.521m+
Tape & Box (TB) 1200$ 0.191m+
2400$ 0.17
3600$ 0.16
6000$ 0.15
8400$ 0.14
12000$ 0.14
30000$ 0.12
60000$ 0.12

CAD

3D models and CAD resources for this part

Description

General part information

A1N5404 Series

Diode 400 V 3A Through Hole DO-27

Documents

Technical documentation and resources

No documents available