Discrete Semiconductor Products

A1N5404G-G

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DIODE GEN PURP 400V 3A DO27

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Discrete Semiconductor Products

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DIODE GEN PURP 400V 3A DO27

Technical Specifications

Parameters and characteristics for this part

Specification	A1N5404G-G

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-27, DO-201AA, Axial
Qualification	AEC-Q101
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-27
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V

Part	Current - Reverse Leakage @ Vr	Qualification	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Capacitance @ Vr, F	Supplier Device Package	Grade	Mounting Type	Speed [Min]	Current - Average Rectified (Io)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
Comchip Technology A1N5404G-G	5 µA	AEC-Q101	1.1 V	Standard	50 pF	DO-27	Automotive	Through Hole	200 mA 500 ns	3 A	Axial DO-201AA DO-27	400 V	-55 °C	150 °C

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General part information

Diode 400 V 3A Through Hole DO-27

Technical documentation and resources

No documents available