Specification	NTR3A30PZT1G

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17.6 nC
Input Capacitance (Ciss) (Max) @ Vds	1651 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	480 mW
Rds On (Max) @ Id, Vgs	38 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

NTR3A30PZ Series

Single P-Channel Power MOSFET -20V, -2.9A, 38mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
ON Semiconductor NTR3A30PZT1G	17.6 nC	SC-59 SOT-23-3 TO-236-3	Surface Mount	P-Channel	1.8 V 4.5 V	38 mOhm	480 mW	3 A	1651 pF	8 V	MOSFET (Metal Oxide)	20 V	SOT-23-3 (TO-236)	-55 °C	150 °C	1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOSFET−20 V, −5.5 A, Single P−Channel2.4 x 2.9 x 1.0 mm SOT−23 Package

Technical documentation and resources